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Renesas HSG2004 - page 1
Rev.4.00 Jun 21, 2006 page 1 of 12 HSG2004 SiGe HBT High Frequency Medium Power Amplifier REJ03G0484-0400 Rev.4.00 Jun 21, 2006 Features • High Transi tion Freque ncy f T = 30 GHz ty p. • Low Distortion and Excellent Linearity P1dB at out put = +14. 5 dBm ty p. f = 5.8 GHz • High Collector to Emitter Voltage V CEO = 5 V • Ideal for 2 GHz, 5 ...
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Renesas HSG2004 - page 2
HSG2004 Rev.4.00 Jun 21, 2006 page 2 of 12 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions DC current transfer ratio h FE 170 240 320 V CE = 3 V, I C = 30 mA Reverse Transfer Capacitanc e C re 0.6 pF V CB = 3 V, I E = 0, f = 1 MHz, emitter grounded Transition Freq uenc y f T 30.0 GHz V CE = 3 ...
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Renesas HSG2004 - page 3
HSG2004 Rev.4.00 Jun 21, 2006 page 3 of 12 0 5 10 15 20 25 Collector Current I C (mA) Maximum Stable Gain MSG (dB) Maximum Available Gain MAG (dB) Maximum Stable Gain, Maximum Available Gain vs. Collector Current 30 1 10 100 1000 20 0 0.1 1 10 Frequency f (GHz) 30 40 10 S 21 Parameter , Maximum Available Gain, Maximum Stable Gain vs. Frequency 100 ...
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Renesas HSG2004 - page 4
HSG2004 Rev.4.00 Jun 21, 2006 page 4 of 12 2.4 GHz Characteristics Input Power P in (dBm) Output Power P out (dBm) Power Gain PG (dB) 10 -5 -10 15 20 0 25 10 0 100 0 150 200 50 300 P in - P out Characteristics I op (mA) Evaluation Board Circuit P in - P out Characteristics -20 -10 -40 0 10 -20 20 1.5 3.0 4.0 2.5 1.0 Frequency f (GHz) S parameter (d ...
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Renesas HSG2004 - page 5
HSG2004 Rev.4.00 Jun 21, 2006 page 5 of 12 5.8 GHz Characteristics Input Power P in (dBm) 10 0 -10 15 20 5 25 10 20 0 P in - P out Characteristics I op (mA) OUT IN 0.5 pF *1 µ F *1 µ F 0.3 pF 1000 p F 20 Ω 2 pF 2 pF VCC VBB:Bias Control 1000 p F 0.5 pF 0.5 pF 10 p F 10 p F Evaluation Board Circuit P in - P out Characteristics -20 -10 -30 0 10 - ...
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Renesas HSG2004 - page 6
HSG2004 Rev.4.00 Jun 21, 2006 page 6 of 12 Condition: V CE = 3 V, I C = 30 mA, Zo = 50 Ω 100 to 3000 MHz (100 MHz Step) 3200 to 6000 MHz (200 MHz Step) Condition: V CE = 3 V, I C = 30 mA, Zo = 50 Ω 100 to 3000 MHz (100 MHz Step) 3200 to 6000 MHz (200 MHz Step) 10 5 4 3 2 1.5 1 .8 -2 -3 -4 -5 -10 .6 .4 .2 0 -.2 -.4 -.6 -.8 -1 -1.5 .2 .4 .6 .8 1 ...
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Renesas HSG2004 - page 7
HSG2004 Rev.4.00 Jun 21, 2006 page 7 of 12 Condition: V CE = 3.3 V, I C = 30 mA, Zo = 50 Ω 100 to 3000 MHz (100 MHz Step) 3200 to 6000 MHz (200 MHz Step) Condition: V CE = 3.3 V, I C = 30 mA, Zo = 50 Ω 100 to 3000 MHz (100 MHz Step) 3200 to 6000 MHz (200 MHz Step) 10 5 4 3 2 1.5 1 .8 -2 -3 -4 -5 -10 .6 .4 .2 0 -.2 -.4 -.6 -.8 -1 -1.5 .2 .4 .6 . ...
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Renesas HSG2004 - page 8
HSG2004 Rev.4.00 Jun 21, 2006 page 8 of 12 Condition: V CE = 3.6 V, I C = 30 mA, Zo = 50 Ω 100 to 3000 MHz (100 MHz Step) 3200 to 6000 MHz (200 MHz Step) Condition: V CE = 3.6 V, I C = 30 mA, Zo = 50 Ω 100 to 3000 MHz (100 MHz Step) 3200 to 6000 MHz (200 MHz Step) 10 5 4 3 2 1.5 1 .8 -2 -3 -4 -5 -10 .6 .4 .2 0 -.2 -.4 -.6 -.8 -1 -1.5 .2 .4 .6 . ...
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Renesas HSG2004 - page 9
HSG2004 Rev.4.00 Jun 21, 2006 page 9 of 12 S parameter (V CE = 3 V, I C = 30 mA, Zo = 50 Ω ) S11 S21 S12 S22 f (MHz) MAG A NG (deg.) MAG A NG (deg.) MA G ANG (deg.) MA G ANG (deg.) 100 0.684 -61.3 47.90 147.5 0.0103 39.8 1.006 -19.0 200 0.708 -53.6 39.45 142.1 0.0168 50.5 0.811 -53.9 300 0.664 -81.8 35.97 128.9 0.0180 41.9 0.685 -71.2 400 0.644 - ...
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Renesas HSG2004 - page 10
HSG2004 Rev.4.00 Jun 21, 2006 page 10 of 12 S parameter (V CE = 3.3 V, I C = 30 mA, Zo = 50 Ω ) S11 S21 S12 S22 f (MHz) MAG A NG (deg.) MAG A NG (deg.) MA G ANG (deg.) MA G ANG (deg.) 100 0.674 -60.3 48.82 147.33 0.0124 106.4 0.755 -22.6 200 0.708 -53.6 40.51 141.98 0.0146 57.5 0.814 -53.5 300 0.668 -81.6 36.68 128.82 0.0189 39.9 0.690 -70.4 400 ...
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Renesas HSG2004 - page 11
HSG2004 Rev.4.00 Jun 21, 2006 page 11 of 12 S parameter (V CE = 3.6 V, I C = 30 mA, Zo = 50 Ω) S11 S21 S12 S22 f (MHz) MAG A NG (deg.) MAG A NG (deg.) MA G ANG (deg.) MA G ANG (deg.) 100 0.686 -60.1 49.50 147.35 0.0070 30.5 0.897 -21.2 200 0.713 -53.6 41.32 141.93 0.0155 53.8 0.815 -52.9 300 0.669 -81.1 37.11 128.90 0.0200 42.6 0.690 -69.6 400 0. ...
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Renesas HSG2004 - page 12
HSG2004 Rev.4.00 Jun 21, 2006 page 12 of 12 Package Dimensions 1.965 1.965 0 2.00 2.00 0.3 0.65 0.35 0.350 0.225 2.075 2.075 0.80 0.05 0.10 0.08 0.10 Reference Symbol Dimension in Millimeters Min Nom Max D E A A 1 A 2 b e L p x y y 1 Z D Z E 76 D A 1 A E 5 1 84 48 2 3 M xS A B S y 5 b 6 0.90 L p 0.05 0.60 7 32 Z D Z E C0.15 1 e A S B S y 1 P-HWQFN8 ...
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Renesas HSG2004 - page 13
Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safe ...
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