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Manual Philips BUK215-50Y

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  • Philips BUK215-50Y - page 1

    Philips Semiconductors Product specification TOPFET high side switch BUK215-50Y SMD version of BUK210-50Y DESCRIPTION QUICK REFERENCE DATA Monolithic single channel high side SYMBOL PARAMETER MIN. UNIT protected power switch in TOPFET2 technology assembled in I L Nominal load current (ISO) 9 A a 5 pin plastic surface mount package. SYMBOL PARAMETER ...

  • Philips BUK215-50Y - page 2

    Philips Semiconductors Product specification TOPFET high side switch BUK215-50Y SMD version of BUK210-50Y LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V BG Continuous supply voltage 0 50 V I L Continuous load current T mb ≤ 95˚C - 20 A P D Total power dissipat ...

  • Philips BUK215-50Y - page 3

    Philips Semiconductors Product specification TOPFET high side switch BUK215-50Y SMD version of BUK210-50Y STATIC CHARACTERISTICS Limits are at -40˚C ≤ T mb ≤ 150˚C and typicals at T mb = 25 ˚C unless otherwise stated. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Clamping voltages V BG Battery to ground I G = 1 mA 50 55 65 V V BL Battery t ...

  • Philips BUK215-50Y - page 4

    Philips Semiconductors Product specification TOPFET high side switch BUK215-50Y SMD version of BUK210-50Y INPUT CHARACTERISTICS 9 V ≤ V BG ≤ 16 V. Limits are at -40˚C ≤ T mb ≤ 150˚C and typicals at T mb = 25 ˚C unless otherwise stated. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT I I Input current V IG = 5 V 20 90 160 µ A V IG Input ...

  • Philips BUK215-50Y - page 5

    Philips Semiconductors Product specification TOPFET high side switch BUK215-50Y SMD version of BUK210-50Y UNDERVOLTAGE & OVERVOLTAGE CHARACTERISTICS Limits are at -40˚C ≤ T mb ≤ 150˚C and typicals at T mb = 25 ˚C. Refer to TRUTH TABLE . SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Undervoltage V BG(UV) Low supply threshold voltage 1 2 ...

  • Philips BUK215-50Y - page 6

    Philips Semiconductors Product specification TOPFET high side switch BUK215-50Y SMD version of BUK210-50Y OVERLOAD PROTECTION CHARACTERISTICS 5.5 V ≤ V BG ≤ 35 V, limits are at -40˚C ≤ T mb ≤ 150˚C and typicals at T mb = 25 ˚C unless otherwise stated. Refer to TRUTH TABLE . SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Overload protect ...

  • Philips BUK215-50Y - page 7

    Philips Semiconductors Product specification TOPFET high side switch BUK215-50Y SMD version of BUK210-50Y Fig.4. High side switch measurements schematic. (current and voltage conventions) Fig.5. Typical on-state resistance, t p = 300 µ s. R ON = f(T j ); parameter V BG ; condition I L = 10 A Fig.6. Typical on-state characteristics, T j = 25 ˚C. I ...

  • Philips BUK215-50Y - page 8

    Philips Semiconductors Product specification TOPFET high side switch BUK215-50Y SMD version of BUK210-50Y Fig.10. Typical supply quiescent current. I B = f(T j ); condition V BG = 16 V, V IG = 0 V, V LG = 0 V Fig.11. Typical off-state leakage current. I L = f(T j ); conditions V BL = 16 V = V BG , V IG = 0 V. Fig.12. Status leakage current. I S = f ...

  • Philips BUK215-50Y - page 9

    Philips Semiconductors Product specification TOPFET high side switch BUK215-50Y SMD version of BUK210-50Y Fig.16. Typical status low characteristic. V SG = f(T j ); conditions V BG ≥ 9 V, I S = 100 µ A Fig.17. Typical threshold voltage characteristic. V IG = f(T j ); condition 9V ≤ V BG ≤ 16V Fig.18. Typical input clamping voltage. V IG = f( ...

  • Philips BUK215-50Y - page 10

    Philips Semiconductors Product specification TOPFET high side switch BUK215-50Y SMD version of BUK210-50Y Fig.22. Typical battery to ground clamping voltage. V BG = f(T j ); parameter I G Fig.23. Typical battery to load clamping voltage. V BL = f(T j ); parameter I L ; condition I G = 10mA Fig.24. Typical negative load clamping. I L = f(V LG ); con ...

  • Philips BUK215-50Y - page 11

    Philips Semiconductors Product specification TOPFET high side switch BUK215-50Y SMD version of BUK210-50Y Fig.28. Short circuit load threshold voltage. V BL(TO) = f(V BG ); conditions -40˚C ≤ T mb ≤ 150˚C Fig.29. Typical output capacitance. T mb = 25 ˚C C bl = f(V BL ); conditions f = 1 MHz, V IG = 0 V Fig.30. Typical reverse battery charact ...

  • Philips BUK215-50Y - page 12

    Philips Semiconductors Product specification TOPFET high side switch BUK215-50Y SMD version of BUK210-50Y MECHANICAL DATA Fig.34. SOT426 surface mounting package 1 , centre pin connected to mounting base. REFERENCES OUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE IEC JEDEC EIAJ SOT426 0 2.5 5 mm scale Plastic single-ended surface mounted package (Ph ...

  • Philips BUK215-50Y - page 13

    Philips Semiconductors Product specification TOPFET high side switch BUK215-50Y SMD version of BUK210-50Y DEFINITIONS DATA SHEET STATUS DATA SHEET PRODUCT DEFINITIONS STATUS 1 STATUS 2 Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to chang ...

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