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Manuale per l’uso Toshiba Semiconductor

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Summary
  • Toshiba Semiconductor - page 1

    [6] Handling Guide 93 [ 6 ] Handling Guide 1. Using T oshiba Semiconductors Safely TOSH IBA is contin ually wo rking to improve t he qu ality and reliabi lity of its produc ts. Neverthe less, semicondu cto r devices in ge neral can mal f unction o r fai l due to their i nherent el ectrical sensitiv ity and vul nerability t o physical stress. It is ...

  • Toshiba Semiconductor - page 2

    [6] Handling Guide 94 2. Safety Precautions This section lists imp ortant precaut ions whic h users of semiconduct or devic es (and an yone els e) should ob serve in or der t o avoid i njury and damag e to prop erty , and to ensur e safe a nd cor rect use of devices . Please be sur e that you underst and the meaning s of the labels and the gr aphic ...

  • Toshiba Semiconductor - page 3

    [6] Handling Guide 95 2.1 General Precautions reg arding Semiconductor D evices Do not use devices under conditions exceeding t hei r absolut e maxim um ratings (e. g. c urrent, vol t age, pow er dissi pation or temperature). This may cause the device to break down, degrade its performance, or caus e it to catch fire or explode resulti ng in inj ur ...

  • Toshiba Semiconductor - page 4

    [6] Handling Guide 96 3. General Safety Precautions and Usage Considerations This secti on is designed to help you gain a better understandi ng of semico n ductor devices , so as to ensure the s afety , qualit y and relia bility of the devic es which you inc orporate into your designs. 3.1 From Incoming to Shipping 3.1.1 Elect rostatic Discharge (E ...

  • Toshiba Semiconductor - page 5

    [6] Handling Guide 97 (e) Make s ure that se ctions of the ta pe carrier wh i ch come i nto contact wi th install a tion device s or other elect rical mach inery are mad e of a l ow-resist ance mat erial. (f) Make sure that jigs and tools used in the assembly process do not touch devic es. (g) I n processe s in which packa ge s may retai n an elect ...

  • Toshiba Semiconductor - page 6

    [6] Handling Guide 98 • Whe n storing pri n ted circuit boards wh ich have device s mounted on them, use a board container or bag that is prot ected ag ainst stat ic charge. T o avoid the occ urrence of stati c charge or discharg e due t o fri ction, keep the b oards sep arat e from one other and do not stack them direc tly on top of one anot h e ...

  • Toshiba Semiconductor - page 7

    [6] Handling Guide 99 3.2 Sto rage 3.2.1 Gen eral Storage • A void storage l o cations wher e device s will b e exposed to moistur e or dir ect sunlig ht • Follow the instructions pri nted on the device cartons regarding transport ation and st orage. • The storag e area t emperatur e should be kept with in a temperature r ange of 5°C to 35° ...

  • Toshiba Semiconductor - page 8

    [6] Handling Guide 100 3.3 Design Care must be exer cised in the des i gn of elect ronic e quipm ent to ach ieve t he desir ed rel iability . It is important n ot only to adhere to specif ications c oncerning absolut e maximu m ratings and recommend ed oper ating condit ions, it is also imp ortant to consid er the ov erall envir onment i n which eq ...

  • Toshiba Semiconductor - page 9

    [6] Handling Guide 101 3.3.4 Input processing Inputs to CMO S ICs hav e such a high i m pedance that the log ic level b e comes undef ined under open i nput conditions. S hould t he float ing input be neith er High nor Low , both P-cha nnel and N-c hannel tr ansistors tu rn on, and unnece ssary supply cu rre nt flows. Therefor e, as shown in Fig ur ...

  • Toshiba Semiconductor - page 10

    [6] Handling Guide 102 3.3.7 Effe ct of Slow Rise and Fall Time on Input When a wav eform wit h a slow rise and fall time is applie d to a CMOS input, th e output will sometimes tend to oscillate around V th (the circuit thres hold voltage) of th e input waveform. This is becau se the CMOS gate becomes an eq uivalen t linear ampli fier in the vi ci ...

  • Toshiba Semiconductor - page 11

    [6] Handling Guide 103 3.3.10 Wirin g Precaut ions (1) Output waveform distortion Since the output i mpedanc es of t he Mini- MOS Ser ies are v ery low , distor tion is s ometim es caused in the outp ut wavef orm by the L componen t of th e wiring . This oc curs when t he wiring connected to the output pin i s long or w hen capac itance is c onnect ...

  • Toshiba Semiconductor - page 12

    [6] Handling Guide 104 3.3.11 Latch-up CMOS dev ices are subj ect to latch-up , an undes irable co ndit ion in whic h a paras itic P NPN junc tion (thyristo r) in the CMOS I C co nducts. An abnormal current of se veral hundred m A can flow be tween V CC and GND, destroying th e IC. Latch-up occurs when th e voltag e applied t o the input or out put ...

  • Toshiba Semiconductor - page 13

    [6] Handling Guide 105 T able 3.1 T est Resu lt EIAJ Method MIL-STD Method Name Input Output Input Out put TC7MH244FK >± 200 V >± 200 V >± 2000 V >± 2000 V TC7MET244AFK >± 200 V >± 200 V >± 2000 V >± 2000 V TC7MZ244FK >± 200 V >± 200 V >± 2000 V >± 2000 V TC7MA244FK >± 200 V >± 200 V >± 20 ...

  • Toshiba Semiconductor - page 14

    [6] Handling Guide 106 3.3.13 M eta-St able Characteristi cs When the s etup t ime or hold-t ime of a f lip-fl op is not ad hered to th e device’ s output respons e is uncertain. T his ph enomenon is called meta-st abilit y . The dia gram shown above describ es a meta-sta ble state which can gene rate a glitch or increa se the propaga tion delay ...

  • Toshiba Semiconductor - page 15

    [6] Handling Guide 107 3.3.14 T hermal Design The fail ure rate o f semicond ucto r devices is greatl y increased a s operatin g temperatu r e s increa se . As shown in Figure 3.9, the i nternal thermal st ress on a devic e is the sum of the ambient temperature and the t emperatur e rise due to pow er dissip ation in the d e vice. Therefor e, to ac ...

  • Toshiba Semiconductor - page 16

    [6] Handling Guide 108 3.3.16 External No ise Printed circ uit boards w ith long I/O or sign al patt ern lines are vulnerab le to induc ed noise or surg es from outsid e sources. Consequently , malfunctions or breakdowns can r esult from overcur rent or ov ervo ltage, d epending on the t ypes of d evi ce used. T o protect aga inst nois e, lower the ...

  • Toshiba Semiconductor - page 17

    [6] Handling Guide 109 3.3.19 Safety Stan dards Each countr y has safety standar ds which must be obs erved. Thes e safety standards include requirement s for qu ality a ssurance sy stems and design of device insulatio n. Such requ irement s must be fully t aken into account to ensure that your d esign conf orms to th e applic able safet y standar ...

  • Toshiba Semiconductor - page 18

    [6] Handling Guide 110 3.4.2 Inspect ion Sequence 1. Do not inser t devic es in the wrong or ientation. Make su re that the positiv e and neg ative el ectrodes of the p ower supply are c orrectly conne cted. Othe rwise, the rated ma ximum curre nt or maximu m power dissipat ion may b e exce eded and the dev ice may br eak do wn or under go perform ...

  • Toshiba Semiconductor - page 19

    [6] Handling Guide 111 on the internal lea d s. I f the relative di ffere nce is grea t enough, the device’ s interna l leads, adh esive proper ties or s ealant can be damaged. O bserv e these p recaution s during the l ead-form ing p rocess (this does n ot apply to surfac e-mount devices): (1) Lead inser tion h ole interva ls on the p rint ed ci ...

  • Toshiba Semiconductor - page 20

    [6] Handling Guide 112 3.5.3 Solder ing T emp erature Pr ofile The solder ing t emperat ure and heating time var y from d evice t o devic e. Therefor e, when specify ing the mounting conditions, re fer to the individual datasheets and da tabooks for the devices used. (1) Using a sold ering iron Complet e solder ing within t en seconds for lead temp ...

  • Toshiba Semiconductor - page 21

    [6] Handling Guide 113 3.5.4 Flux Cleaning and Ultra sonic Cleaning (1) Whe n cleaning ci rcuit boards to re move flux, ma ke sure that no res idual rea cti ve ions such as Na or Cl rema i n. Note that organi c solvents rea ct with water to ge nerate hydro gen chloride a nd other co rrosive ga se s which can degra de device perfo rmance. (2) W ashi ...

  • Toshiba Semiconductor - page 22

    [6] Handling Guide 114 3.5.5 No Clean ing If analo g devices or hi gh-speed devices are used wi tho u t being clea n ed, flux residue s may cause minute amounts of leakage between pins. Simi larly , dew condensati on, which oc curs in env ironments contai ning resi dual chlori ne when powe r to the device is on, ma y cause betwe en-lead leaka ge or ...

  • Toshiba Semiconductor - page 23

    [6] Handling Guide 115 3.6 Protecting Devices in the Field 3.6.1 T emperat ure Semi co nductor devi ces are gen e rally mo re sensiti ve to temperature than are oth e r electroni c component s. The v arious elect rical char acteristic s of a semiconduc tor devic e are d ependent on the ambient te mperatur e at w hich t he devic e is used . It is th ...

  • Toshiba Semiconductor - page 24

    [6] Handling Guide 116 3.6.6 Interferen ce from L ight (ult raviolet ra ys, sunligh t, fluo rescent lamps and incan descent lamps) Light stri king a semi conductor de vice genera tes electro motive force due to photoelectri c effects. In some ca se s the device can malfuncti on. This is especially true for devices in which the inte rnal ch i p is e ...

Fabbricante Toshiba Categoria Network Card

I documenti che otteniamo dal fabbricante del dispositivoToshiba Semiconductor possono essere suddivisi in diversi gruppi. Questi sono tra gli altri:
- disegni tecnici Toshiba
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Tutti sono importanti, ma le informazioni più importanti dal punto di vista di utilizzo del dispositivo possono essere trovate nel manuale per l’uso Toshiba Semiconductor.

Un gruppo di documenti denominato manuali per l’uso, è anche suddiviso in tipi più specifici, come: Manuali di installazione Toshiba Semiconductor, manuali di manutenzione, brevi manuali o manuali utente Toshiba Semiconductor. A seconda delle esigenze, si dovrebbe cercare il documento necessario. Nel nostro sito web, puoi visualizzare il manuale più popolare per l'uso del prodotto Toshiba Semiconductor.

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Manuale completo del dispositivo Toshiba Semiconductor, come deve essere?
Il manuale per l’uso, denominato anche istruzioni per l’uso, o semplicemente il manuale è un documento tecnico progettato per aiutare ad utilizzare Toshiba Semiconductor dagli utenti. I manuali sono di solito scritti da uno scrittore tecnico, ma in un linguaggio accessibile a tutti gli utenti Toshiba Semiconductor.

Il manuale per l’uso completo Toshiba, dovrebbe includere vari elementi di base. Alcuni di loro sono meno importanti, come ad esempio: copertina / pagina del titolo o pagina di autore. Tuttavia, la parte rimanente, dovrebbe fornire informazioni importanti dal punto di vista dell'utente.

1. Introduzione e la guida su come utilizzare il manuale Toshiba Semiconductor - All'inizio di ogni manuale, dovremmo trovare indizi su come utilizzare il documento. Dovrebbe contenere informazioni sulla posizione dell’indice Toshiba Semiconductor, FAQ o i problemi più comuni : i punti che sono più spesso cercati dagli utenti di ogni manuale
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5. FAQ - domande più frequenti
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